{"created":"2023-06-20T16:07:15.371325+00:00","id":128,"links":{},"metadata":{"_buckets":{"deposit":"d9d31337-3cb9-474d-bb03-49896d4a3d85"},"_deposit":{"created_by":1,"id":"128","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"128"},"status":"published"},"_oai":{"id":"oai:hyogo-u.repo.nii.ac.jp:00000128","sets":["6"]},"author_link":["469"],"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-02-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"967","bibliographicPageStart":"965","bibliographicVolumeNumber":"80","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_3_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_3_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.1449538","subitem_relation_type_select":"DOI"}}]},"item_3_relation_34":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://apl.aip.org/apl/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://apl.aip.org/apl/","subitem_relation_type_select":"URI"}}]},"item_3_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright 2002 American Institute of Physics"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hideki, Koyama"}],"nameIdentifiers":[{"nameIdentifier":"469","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-12-06"}],"displaytype":"detail","filename":"koyama_AIP_APL2002.pdf","filesize":[{"value":"58.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"koyama_AIP_APL2002.pdf","url":"https://hyogo-u.repo.nii.ac.jp/record/128/files/koyama_AIP_APL2002.pdf"},"version_id":"ca160adb-a817-4818-b78b-d1fa7616dfe1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching"}]},"item_type_id":"3","owner":"1","path":["6"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-01-07"},"publish_date":"2009-01-07","publish_status":"0","recid":"128","relation_version_is_last":true,"title":["Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T00:47:45.383923+00:00"}